Parameters for point-defect diffusion and recombination

Point-defect kinetics are important for understanding and modeling dopant diffusion in silicon. This paper describes models for point-defect transport and recombination used in SUPREM-IV, and does extensive fitting for the model parameters. The experimental data used are from experiments on oxidation-enhanced diffusion (OED). Interstitial traps are shown to be critical for consistent agreement with experimental data. Point-defect parameters in lightly doped regions are extracted and fit to Arrhenius expressions.